| 型号：FQB6N60TM | 类别：FET - 单 | 制造商：Fairchild Semiconductor |
| 封装：TO-263-3，D²Pak（2 引线+接片），TO-263AB | 描述：MOSFET N-CH 600V 6.2A D2PAK | |
详细参数
| 类别 | FET - 单 |
|---|---|
| 描述 | MOSFET N-CH 600V 6.2A D2PAK |
| 系列 | QFET™ |
| 制造商 | Fairchild Semiconductor |
| FET型 | MOSFET N 通道，金属氧化物 |
| FET特点 | 标准 |
| 漏极至源极电压（Vdss） | 600V |
| 电流_连续漏极（Id）0a025000C | 6.2A |
| 开态Rds111最大2220a0IdwwwwVgs0a025000C | 1.5 欧姆 @ 3.1A，10V |
| Id时的Vgs（th）111最大222 | 5V @ 250µA |
| 闸电荷（Qg）0a0Vgs | 25nC @ 10V |
| 输入电容（Ciss）0a0Vds | 1000pF @ 25V |
| 功率_最大 | 3.13W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装 | D²PAK |
| 包装 | 带卷 (TR) |
供应商
| 深圳市科恒伟业电子有限公司 | 柯0755-88917652分机801-83200050 |
| 深圳市科翼源电子有限公司 | 朱小姐13510998172 |
| 深圳市华雄半导体(集团)有限公司 | 王0512-67241533 |
| 深圳市银芯龙科技有限公司 | 欧阳13510131896 |
| 深圳市鑫远鹏科技有限公司 | 谌小姐15112667855 |
| 深圳市华斯顿电子科技有限公司 | 朱咸华0755-83777708/83777607/82799993 |
| 深圳市科恒伟业电子有限公司 | 李小姐086-0755-82569753-32922817-36561078-801 |
| 深圳市芯福林电子科技有限公司 | 张女士0755-82574045 |
| 深圳市裕硕科技有限公司 | 雷小姐086-0755-23613962/82706142 |
| 深圳市芯脉实业有限公司 | 周19166203057 |
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